%PDF-1.4
%
1 0 obj
<>stream
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endstream
endobj
2 0 obj
<>
endobj
3 0 obj
<>stream
IEEE
Journal of Lightwave Technology;2021;39;16;10.1109/JLT.2021.3084324
Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer
III-V semiconductor materials
monolithic integration
nano-ridge engineering
optical simulation
photodetectors
quantum well devices
semiconductor waveguides
silicon photonics
Cenk Ibrahim Ozdemir
Yannick De Koninck
Didit Yudistira
Nadezda Kuznetsova
Marina Baryshnikova
Dries Van Thourhout
Bernardette Kunert
Marianna Pantouvaki
Joris Van Campenhout
endstream
endobj
4 0 obj
<>stream
x+ |
endstream
endobj
5 0 obj
<>stream
xS**T0423U0 Bs#c=sSS\L|@@. y
endstream
endobj
6 0 obj
<>stream
hbd`ab`ddssqtqvu04 (e!CGXK뺟3X'⇝PTG_AbQj^QfzFIRf:b;T45--u,sS2|K2RsKԒJ
+}rbt;M̒ԢTNH0032d#Nw.0?wﱿſMo^)!;ՖI5jʥVhjj9a֡3}{b);t.00,'NwsgM^H}}wbrStJMmn Swo%cz~t|ـVg[>u