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Authors: D. Korn, R. Palmer, H. Yu, P.C. Schindler, L. Alloati, M. Baier, R. Schmorow, W. Bogaerts, S. Selvaraja, G. Lepage, M. Pantouvaki, J.M.D. Wouters, P. Verheyen, J. Van Campenhout, B. Chen, R. Baets, P. Absil, R. Dinu, C. Koos, W. Freude, J. Leuthold
Title: Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s
Format: International Journal
Publication date: 5/2013
Journal/Conference/Book: Optics Express
Editor/Publisher: OSA, 
Volume(Issue): 21(11) p.13219-13227
DOI:
Download: Download this Publication (2.2MB) (2.2MB)

Abstract

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electrooptic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of
620 fJ/bit.

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