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Authors: P. Dumon, W. Bogaerts, D. Van Thourhout, G. Morthier, R. Baets
Title: Compact arrayed waveguide grating devices in silicon-on-insulator
Format: International Conference Proceedings
Publication date: 12/2005
Journal/Conference/Book: Proceedings Symposium IEEE/LEOS Benelux Chapter
Editor/Publisher: P. Megret, M. Wuilpart, S. Bette, N. Staquet, 
Volume(Issue): p.105-108
Location: Mons, Belgium
Citations: Look up on Google Scholar
Download: Download this Publication (251KB) (251KB)


Very compact arrayed waveguide gratings were fabricated in Silicon-on-Insulator using CMOS compatible processes. The high index contrast makes a 5 micron bend radius possible. Now, the device size is not limited by the bend radius anymore. The insertion loss of the devices is kept low by applying a double etch technique, and the cross-talk level is reduced by broadening the waveguides were there is no absolute need for single mode waveguides. Measured insertion losses are around 3.5 dB, while the crosstalk level is better than -12dB. A 4×4 AWG was pigtailed and used in a 10 gigabit/s optical backplane interconnect application.

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