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Authors: H. Yu, W. Bogaerts, A. De Keersgieter
Title: Optimization of ion implantation condition for depletion-type silicon optical modulators
Format: International Journal
Publication date: 12/2010
Journal/Conference/Book: IEEE Journal of Quantum Electronics
Volume(Issue): 46(12) p.1763-1768
DOI: 10.1109/jqe.2010.2067206
Citations: 28 (Web of Knowledge / Dimensions.ai - last update: 27/9/2020)
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Abstract

We study the influence of the ion implantation conditions on the performance of depletion-type silicon optical modulators by a combined simulation of the process flow, the electrical characteristic and the beam propagation. Through calculations about different implantation positions, energies and tilt angles, our work reveals that a gap between specific implantation windows is able to alleviate the modulation efficiency degradation due to the lateral straggling of implanted ions, while a tilt angle reduces the optical loss without harming the modulation efficiency. After an optimization about the implantation condition, the extinction ratio of the Mach-Zehnder modulator can be improved by 4.6 dB, while its optical loss falls from 3 dB to 2.47 dB. Finally, a simplified doping pattern which eliminates 2 implantation steps is discussed.

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