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Authors: A. Raza, S. Clemmen, M. Van Daele, J. Dendooven, M.B. E. Griffiths, S.T. Barry, A. Skirtach, C. Detavernier, R. Baets
Title: On-chip surface enhanced Raman spectroscopy using ALD grown plasmonic nanotrenches integrated with a silicon nitride slot waveguide
Format: International Conference Proceedings
Publication date: 4/2019
Journal/Conference/Book: European Conference on Integrated Optics (ECIO 2019)
Volume(Issue): 21 p.paper T.B1.3
Location: Gent, Belgium
Citations: Look up on Google Scholar
Download: Download this Publication (1.4MB) (1.4MB)


We present an enhanced Raman spectroscopy using sub 10 nm plasmonic nanotrenches directly grown on a
silicon nitride slot waveguide using atomic layer deposition (ALD). A novel ALD process for gold deposition at
100 C is used, the precursor and reactant used for this process are Me3AuPMe3 and H2 plasma, respectively.
The fabricated Raman sensor exhibits  1.5  10􀀀8 pump to Stokes conversion efficiency for a monolayer
of 4-Nitrophenol. This is at least an order of magnitude higher than the state of art nanoplasmonic waveguide
based Raman sensors.

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