Integrated avalanche germanium photodetector
||EP-15152513 A (Pending,
||EP-3038167 A1 (Pending,
An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector 100 comprises a Ge body 110 adapted to conduct and optical mode. The Ge body 110 comprises a first p-doped region 120, for the absorption of an optical mode. The first p-doped region 120 extends from a first main surface 111 to a second main surface 112 of the Ge body 110. The Ge body 110 comprises a first n-doped region 130 that extends from the first main surface 111 towards the second main surface 112 of the Ge body 110. An intrinsic region 115 occupies the undoped part of the Ge body 110. A first avalanche junction is formed by the first n-doped region 130 that is located aside the p-doped region 120. The Ge body 110 comprises an incidence surface 310, suitable for receiving an optical mode 300. The incidence surface 310 is perpendicular to the first avalanche junction. A second n-doped Ge region 140 that covers the Ge body 110 and forms a second PN avalanche junction with the first p-doped region 120 at the first main surface 111.
Related Research Topics
Back to patent list