| Authors: | A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout | | Title: | Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers | | Format: | International Journal | | Publication date: | 10/2018 | | Journal/Conference/Book: | Applied Physics Letters
| | Editor/Publisher: | AIP publishing, | | Volume(Issue): | 113(16) p.paper 161101 | | DOI: | 10.1063/1.5040153 | | Citations: | 8 (Dimensions.ai - last update: 17/11/2024)
8 (OpenCitations - last update: 27/6/2024)
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Abstract
Highly P doped Ge layers are proposed as a material to realize an on-chip laser for optical interconnect applications. In this work, we demonstrate that these donor impurities have a dramatic impact on the excess carrier lifetime and introduce detrimental many-body effects such as linewidth broadening in the gain medium. Linewidth broadening Γopt = 10 meV for undoped Ge and Γopt ≥ 45 meV for Ge with doping level up to 5.4×1019 cm−3, were extracted using photoluminescence spectroscopy and pump-probe spectroscopy. In addition, we observed that the excess carrier lifetime (τc) drops by more than an order of magnitude from 3 ns in undoped Ge to < 0.3 ns in doped Ge.
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