Authors:	J. Zhang, I. Krestnikov, R. Loi, P. Ossieur, G. Lepage, P. Verheyen, J. Van Campendhout, D. Van Thourhout, G. Roelkens
Title:	Micro-Transfer-Printed O-band GaAs QD III-V-on-Si DFB Laser
Format:	International Conference Poster
Publication date:	5/2022
Journal/Conference/Book:	European Conference on Integrated Optics
Volume(Issue):	p.paper W.P.13 (3 pages)
Location:	Milan, Italy
Online:	https://www.ecio-conference.org/wp-content/uploads/2022/07/ECIO_proceedingsv3.pdf
Citations:	Look up on Google Scholar
Download:	(2.1MB)

Abstract

We present an array of GaAs QD III-V-on-Si DFB lasers integrated by micro-transfer printing. An alignment tolerant III-V/Si taper structure is used to evanescently couple light from the laser cavity to the underlying 400 nm thick rib waveguide. Single mode operation around 1300 nm with 48 dB side mode suppression ratio and a waveguide-coupled power of 0.5 mW is demonstrated.

Related Research Topics

• GaAs on Si lasers for optical interconnect applications
• Transfer printing technology

Related Projects

• H2020: CALADAN (Micro assembled Terabit/s capable optical transceivers for Datacom applications)