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Authors: S. Poelman, M. Billet, A. Hermans, N. Fiuczek, H. Turski, B. Kuyken
Title: Transfer Printing of InGaN/GaN Quantum-Well based Light Emitting Diodes
Format: International Conference Proceedings
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Location: San Jose, United States
Citations: Look up on Google Scholar


We demonstrate the transfer printing of an InGaN/GaN-QW based LED on a
silicon substrate, emitting around 470 nm. This result is the first step toward heterogeneous
integration of GaN-based devices on CMOS-compatible SiN photonic circuits.

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