| Authors: | S. Poelman, M. Billet, A. Hermans, N. Fiuczek, H. Turski, B. Kuyken | | Title: | Transfer Printing of InGaN/GaN Quantum-Well based Light Emitting Diodes | | Format: | International Conference Proceedings | | Publication date: | Accepted for publication. Not yet published | | Journal/Conference/Book: | Conference on Lasers and Electro-Optics
| | Location: | San Jose, United States | | Citations: | Look up on Google Scholar
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Abstract
We demonstrate the transfer printing of an InGaN/GaN-QW based LED on a
silicon substrate, emitting around 470 nm. This result is the first step toward heterogeneous
integration of GaN-based devices on CMOS-compatible SiN photonic circuits. |
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