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Authors: J. Zhang, L. Bogaert, C.J. Krückel, E. Soltanian, H. Deng, B. Haq, J.Rimbock, J. Van Kerrebrouck, G. Lepage, P. Verheyen, J. Van Campenhout, P. Ossieur, D. Van Thourhout, G. Morthier, W. Bogaerts, G. Roelkens
Title: Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters
Format: International Journal
Publication date: 12/2023
Journal/Conference/Book: Optics Express
Volume(Issue): 31(26) p.42807-42821
DOI: 10.1364/OE.505112
Citations: 1 (Dimensions.ai - last update: 12/5/2024)
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Abstract

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using
micro-transfer printing (μTP). After the introduction of the μTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that
are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

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