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Heterogeneous integration technology for silicon photonics

Silicon is a great material for realizing complex photonic integrated circuits but not always ideal for realizing active functions such as light emission, amplification, modulation, switching and detection. Therefore we are developing novel approaches to integrate materials better suited for these functions with silicon integrated circuits. An approach investigated intensively in the group is the wafer or die bonding of III-V epitaxial layers on silicon. After substrate removal these are then processed to highly efficient lasers, detectors or modulators. Other materials being integrated include colloidal quantum dots, epitaxially grown InP based materials, graphene, ITO and different kinds of electro-optical materials. Details can be found in the research topics listed below.

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