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PhD. of Utsav D. Dave

Author: Utsav Dave
Promotors: Gunther Roelkens and Bart Kuyken
Dutch Title: Niet-lineaire optica in golfgeleidercircuits geimplementeerd in a-Si:H-op-isolator en InGaP-op-isolator
English Title: Nonlinear Optics in a-Si:H-on-Insulator and InGaP-on-Insulator Waveguide Circuits
Date: 20/1/2017
Main Language: English
ISBN number: 978-90-8578-974-1
Thesis: Download the PhD Thesis (13.7MB) (13.7MB)
Presentation: Download the Presentation (7.5MB) (7.5MB)

Abstract

The work presented in this thesis describes the use of amorphous silicon (a-Si) and the III-V material InGaP for overcoming the shortcomings of implementing nonlinear functionalities in integrated platforms such as silicon-on-insulator (SOI). Towards that end, the generation of a supercontinuum which spans the telecom to the short-wave infrared wavelength range in dispersion engineered a-Si waveguides was achieved. With regards to the InGaP material, the process for fabricating thin membranes of the material bonded to silicon substrates was developed. The desired nonlinear devices were then patterned into the InGaP layer by Ebeam lithography and inductively coupled plasma etching. Properties such as linear and nonlinear loss were then characterized and found suitable for a wide variety of nonlinear applications. Hence, both second- and third-order nonlinear optical processes such as quasi- and modal-phase matched second harmonic generation, efficient four-wave mixing, octave-spanning coherent supercontinuum generation etc. were demonstrated in InGaP membrane devices such as waveguides, ring resonators and microdisk resonators. Further, the fabrication process for the integration of these devices with both SOI and SiN chips was developed and it was shown that this integrated nonlinear optical platform indeed offers several advantages for nonlinear applications.

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