Abstract
We report on the development of an ohmicm metal–semiconductor contact for application in anmamplifying waveguide optical isolator. It is the result of magnetooptic waveguide simulations combined with experimental extraction of the contact resistivity. The optimized contact scheme is a p++-doped hybrid In0.81Ga0.19As0.41P0.59–In0.53Ga0.47As structure, a compromise between good isolating performance and good electrical behavior. Related Research Topics
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