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Authors: F.Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O'Faolain, F. Dong, J.M. Fedeli, P. Dumon, L. Vivien, T.F. Krauss, G.T. Reed, J. Marti
Title: High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
Format: International Journal
Publication date: 11/2009
Journal/Conference/Book: Optics Express
Volume(Issue): 17(24) p.21986-21991
DOI: 10.1364/OE.17.021986
Citations: 130 (Dimensions.ai - last update: 28/2/2021)
114 (OpenCitations - last update: 1/3/2021)
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Abstract

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

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