| Authors: | K. Quang Le, P. Bienstman | | Title: | Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer with Additional Silicon Layer | | Format: | International Journal | | Publication date: | 5/2011 | | Journal/Conference/Book: | IEEE Photonics Journal
| | Volume(Issue): | 3(3) p.538-545 | | DOI: | 10.1109/jphot.2011.2156778 | | Citations: | 18 (Dimensions.ai - last update: 21/4/2024)
10 (OpenCitations - last update: 3/5/2024)
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Abstract
It is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes. Related Research Topics
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