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Authors: B. Kuyken, X. Liu, G. Roelkens, R. Baets, R. M. Osgood Jr., W. M. J. Green
Title: 50 dB Parametric Gain in Silicon Photonic Wires
Format: International Journal
Publication date: 11/2011
Journal/Conference/Book: Optics Letters
Volume(Issue): 36(22) p.4401-4403
DOI: 10.1364/ol.36.004401
Citations: 74 ( - last update: 14/7/2024)
53 (OpenCitations - last update: 3/5/2024)
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A pulsed mid-infrared pump at ë = 2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2-cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (â2) and positive fourth-order (â4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm - 2486 nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification > 40 dB with an on-chip gain bandwidth wider than 580 nm, as well as narrowband Raman-assisted peak gain > 50 dB.

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