| Authors: | B. Kuyken, X. Liu, G. Roelkens, R. Baets, R. M. Osgood Jr., W. M. J. Green | | Title: | 50 dB Parametric Gain in Silicon Photonic Wires | | Format: | International Journal | | Publication date: | 11/2011 | | Journal/Conference/Book: | Optics Letters
| | Volume(Issue): | 36(22) p.4401-4403 | | DOI: | 10.1364/ol.36.004401 | | Citations: | 74 (Dimensions.ai - last update: 17/11/2024)
53 (OpenCitations - last update: 3/5/2024)
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Abstract
A pulsed mid-infrared pump at ë = 2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2-cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (â2) and positive fourth-order (â4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm - 2486 nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification > 40 dB with an on-chip gain bandwidth wider than 580 nm, as well as narrowband Raman-assisted peak gain > 50 dB. Related Projects
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