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Authors: M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.M. Fedeli, G.H. Duan
Title: low-threshold heteroogeneously integrated InP/SOI laser with a double adiabatic taper coupler
Format: International Journal
Publication date: 1/2012
Journal/Conference/Book: Photonics Technoloy Letters
Editor/Publisher: IEEE, 
Volume(Issue): 24(1) p.76-78
DOI: 10.1109/LPT.2011.2172791
Citations: 139 ( - last update: 14/7/2024)
108 (OpenCitations - last update: 3/5/2024)
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We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III–V waveguide has a width of only 1.7 $muhbox{m}$ , reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III–V waveguide and silicon waveguide are tapered, with a tip width for the III–V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 $^{circ}hbox{C}$ is obtained.

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