Abstract
A new process for bonding of 111-V dies to processed
silicon-on-insulator waveguide circuits using divynilsiloxane-bisbenzocycJobutene
(DVS-BCB) was developed using a commercial
wafer bonder. High-quality bonding, with ultra-thin bonding layers « 60 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers. |
|