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Authors: D. Vermeulen, S. Selvaraja, P. Verheyen, P. Absil, W. Bogaerts, D. Van Thourhout, G. Roelkens
Title: Silicon-on-insulator polarization rotator based on a symmetry breaking silicon overlay
Format: International Journal
Publication date: 3/2012
Journal/Conference/Book: IEEE Photonics Technology Letters
Volume(Issue): 24(6) p.482-484
DOI: 10.1109/lpt.2011.2181944
Citations: 61 ( - last update: 14/7/2024)
43 (OpenCitations - last update: 10/5/2024)
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We demonstrate a polarization rotator fabricated
using a 4 etch-step complementary metal–oxide–semiconductor
(CMOS)-compatible process including layer depositions on a
silicon-on-insulator wafer. The measured polarization rotation
efficiency is −0.51 dB over a wavelength range of 80 nm.
A robustness investigation shows that the design is compatible
with CMOS fabrication capabilities.

Citations (OpenCitations)

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