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Authors: G. Duan, C. Jany, A. Le Liepvre, J.G. Provost, D. Make, F. Lelarge, M. Lamponi, F. Poingt, J.M. Fedeli, S. Messaoudene, D. Bordel, S. Brision, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D.J. Thomson, F.Y. Gardes, G.T, Reed
Title: 10Gb/s integrated tunable hybrid III-V/Si laser and silicon MZ modulator
Format: International Conference Proceedings
Publication date: 9/2012
Journal/Conference/Book: 38th European Conference and Exhibition on Optical Communication (ECOC 2012)
Volume(Issue): p.paper Tu.4.E.2
Location: Amsterdam, Netherlands
DOI: 10.1364/eceoc.2012.tu.4.e.2
Citations: 20 (Dimensions.ai - last update: 18/10/2020)
10 (OpenCitations - last update: 19/10/2020)
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Abstract

We demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.


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