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Authors: X. Liu, B. Kuyken, G. Roelkens, R. Baets, R. M. Osgood Jr., W. M. J. Green
Title: Bridging the Mid-Infrared-to-Telecom Gap with Silicon Nanophotonic Spectral Translation
Format: International Journal
Publication date: 9/2012
Journal/Conference/Book: Nature Photonics
Volume(Issue): p.667-671
Internal Reference: [N-1337]
Download: Download this Publication (519KB) (519KB)

Abstract

Expanding far beyond traditional applications in optical interconnects at telecommunications
wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits
for working with mid-infrared (mid-IR) optical signals in the 2-8 ìm range. Silicon’s broadband
transparency, strong optical confinement, and potential for co-integration with CMOS
electronics are but a few of the many characteristics making the silicon platform ideal for
development of high-performance, densely-integrated mid-IR optical systems. These systems are
capable of addressing applications including industrial process and environmental monitoring,
threat detection, medical diagnostics, and free-space communication. Rapid progress has led to
the demonstration of various silicon components designed for the on-chip processing of mid-IR
signals, including waveguides, vertical grating couplers11, microcavities, and electrooptic
modulators. Even so, a notable obstacle to the continued advancement of chip-scale systems is
imposed by the narrow-bandgap semiconductors, such as InSb and HgCdTe, traditionally used to
convert mid-IR photons to electrical currents.

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