| Authors: | H. Yu, M. Pantouvaki, J. Van Campenhout, K. Komorowska, P. Dumon, P. Verheyen, G. Lepage, P. Absil, D. Korn, D. Hillerkuss, J. Leuthold, R. Baets, W. Bogaerts | | Title: | Silicon carrier-depletion-based mach-zehnder and ring modulators with different doping patterns for telecommunication and optical interconnect | | Format: | International Conference Proceedings | | Publication date: | 7/2012 | | Journal/Conference/Book: | 14th International Conference on Transparant Optical Networks (ICTON 2012)
(invited)
| | Volume(Issue): | p.paper Th.A4.3 | | Location: | Coventry, United Kingdom | | DOI: | 10.1109/icton.2012.6254461 | | Citations: | 2 (Dimensions.ai - last update: 17/11/2024)
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Abstract
In this paper, we review our progress on carrier-depletion-based silicon modulator. The lateral and the
interdigitated PN junctions are optimized and then compared systematically. The comparison helps us to choose
a proper doping pattern for 40 Gbit/s modulation with MZ structure and travelling wave electrode. Ring
modulators with both doping patterns are able to work at 10 Gbit/s with 0.5 Vpp driving voltage. We also reduce
the size of ring modulator by utilizing an asymmetrical waveguide. Related Research Topics
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