| Authors: | H. Yu, D. Korn, M. Pautouvaki, J. Van Campenhout, K. Komorowska, P. Verheyen, G. Lepage, P. Absil, D. Hillerkuss, J. Leuthold, R. Baets, W. Bogaerts | | Title: | Using carrier-depletion silicon modulators for optical power monitoring | | Format: | International Journal | | Publication date: | 9/2012 | | Journal/Conference/Book: | Optics letters
| | DOI: | 10.1364/ol.37.004681 | | Citations: | 37 (Dimensions.ai - last update: 14/4/2024)
27 (OpenCitations - last update: 10/5/2024)
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Abstract
Defect mediated sub-bandgap absorption is observed in ion-implanted silicon-on-oxide waveguides which experience a rapid thermal annealing at 1075 ºC. With this effect, general carrier-depletion silicon modulators exhibit the capability for optical power monitoring. Responsivity is measured to be 22 mA/W at -7.1 V bias voltage for a 3 mm long Mach-Zehnder modulator of 2?018 cm-3 doping concentration, and 5.9 mA/W at -10 V bias voltage for a ring modulator of 1?018 cm-3 doping concentration. The latter is used to demonstrate data detection of up to 35 Gbit/s. ?2012 Optical Society of America Related Research Topics
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