| Authors: | M. Pantouvaki, H. Yu, M. Rakowski, P. Christie, P. Verheyen, G. Lepage, N. Van Hoovels, P. Absil, J. Van Campenhout | | Title: | Comparison of Silicon Ring Modulators with Interdigitated and Lateral PN Junctions | | Format: | International Journal | | Publication date: | 4/2013 | | Journal/Conference/Book: | IEEE Journal of Selected Topics in Quantum Electronics
| | Volume(Issue): | 19(2) p.7900308 | | DOI: | 10.1109/JSTQE.2012.2228169 | | Citations: | 28 (Dimensions.ai - last update: 17/11/2024)
16 (OpenCitations - last update: 10/5/2024)
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Abstract
We present a rigorous comparison between Si ring modulators based on interdigitated and lateral p-n junctions. A detailed Si ring modulator model is derived, which is used to fit and benchmark the measured modulation performance of both ring modulators. At 10 Gb/s and 1 Vpp drive swing, the interdigitated ring modulator is found to exhibit a superior extinction ratio at low insertion loss as compared to the lateral ring modulator, at the expense of a higher capacitive load. Design improvements are proposed to obtain 25-Gb/s operation with similar extinction ratio and low insertion loss in future devices. Such devices are attractive to enable power-efficient scaling of optical interconnects to 400 Gb/s and beyond. Related Research Topics
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