Authors: | W. Xie, M. Fiers, S. Selvaraja, J. Van Campenhout, P. Absil, D. Van Thourhout | Title: | High-Q photonic crystal nanocavities on 300 mm SOI substrate fabricated by 193 nm immersion lithography | Format: | International Conference Proceedings | Publication date: | 11/2012 | Journal/Conference/Book: | Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter
| Editor/Publisher: | Marc Wuilpart, Christophe Caucheteur, and Marilina Mura, | Volume(Issue): | p.183-186 | Location: | Mons, Belgium | Citations: | Look up on Google Scholar
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Abstract
On-chip one-dimensional Photonic crystal nanocavities, with a design based on the mode-gap modulation approach, were fabricated in a 300mm silicon-on-insulator wafer using a CMOS-compatible process with 193nm immersion lithography. Characterization of the transmission spectrum shows that a high quality factor of 6.8×104 is achieved in these cavities. The dependence of the resonant mode wavelength and quality factor on the width of the cavity and the size of the holes was investigated by sweeping the width, and by scaling the radius of the holes, respectively. These on-chip nanocavities with high-Q, fabricated through a high-resolution and high-volume CMOS compatible platform provide promising opportunities for integrated photonic applications. Related Research Topics
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