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Authors: S. Selvaraja, M. Schaekers, W. Bogaerts, D. Van Thourhout
Title: Deposited amorphous silicon-on-insulator technology for nano-photonic integrated circuits
Format: International Journal
Publication date: 2/2014
Journal/Conference/Book: Optics Communications
Volume(Issue): 313 p.210-216
DOI: 10.1016/j.optcom.2013.10.033
Citations: 10 ( - last update: 14/7/2024)
9 (OpenCitations - last update: 27/6/2024)
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Low loss deposited amorphous silicon (alpha-Si:H) layers for nano-photonic integrated circuit have been prepared using complementary-metal-oxide-semiconductor (CMOS) compatible technology. Waveguide loss as low as 3.45 dB/cm is reported for films deposited at a low temperature (300 degrees C) using plasma enhanced chemical vapour deposition process. The influence of the deposition parameters such as gas dilution, plasma power and pressure on the quality of the deposited material is thoroughly characterized using Fourier transform infrared spectroscopy (FTlR), spectroscopic ellipsometry, X-ray diffraction and atomic force microscopy. We show that the optical quality of the deposited film can be directly assessed from distinct frequency bands (2090, 2000 and 840 cm(-1)) using FTR, without the need for further waveguide loss measurements.

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