Abstract
Heterogeneous integration of III-V semiconductor materials on the silicon platform is one of the most promising methods for the fabrication of active devices in silicon photonics. In order to implement this method also on the silicon nitride platform, we propose a new type of spotsize converter that uses amorphous silicon as an intermediate coupling layer. This new method is shown to have a high tolerance to bonding and lithography misalignment. While the minimal coupling loss between the III-V and the silicon waveguide lends itself to applications that require power efficiency. |
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