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Authors: R. Wang, Stephan Sprengel, M. Muneeb, Gerhard Boehm, R. Baets, Markus-Christian Amann, G. Roelkens
Title: Design and fabrication of type-II InP-based lasers and photodetectors integrated on SOI waveguide
Format: International Conference Proceedings
Publication date: 11/2015
Journal/Conference/Book: Proceedings of the 2015 annual symposium of the IEEE Photonics Benelux Chapter
Location: Belgium
Internal Reference: [N-1843]
Download: Download this Publication (269KB) (269KB)

Abstract

We present the design and fabrication of 2 µm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An anisotropic wet etching is used to fabricate a very narrow inverted taper tip. The integration of type-II lasers and photodetectors on a silicon photonic integrated circuit using the same III-V epitaxial stack for laser and detector enables the realization of a completely integrated spectroscopic sensor.

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