|Authors: ||R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M.-C. Amann, G. Roelkens|
|Title: ||Design and fabrication of type-II InP-based lasers and photodetectors integrated on SOI waveguide|
|Format: ||International Conference Proceedings|
|Publication date: ||11/2015|
|Journal/Conference/Book: ||Proceedings of the 2015 annual symposium of the IEEE Photonics Benelux Chapter
|Citations: ||Look up on Google Scholar
We present the design and fabrication of 2 µm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An anisotropic wet etching is used to fabricate a very narrow inverted taper tip. The integration of type-II lasers and photodetectors on a silicon photonic integrated circuit using the same III-V epitaxial stack for laser and detector enables the realization of a completely integrated spectroscopic sensor.
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