| Authors: | R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M.-C. Amann, G. Roelkens | | Title: | Design and fabrication of type-II InP-based lasers and photodetectors integrated on SOI waveguide | | Format: | International Conference Proceedings | | Publication date: | 11/2015 | | Journal/Conference/Book: | Proceedings of the 2015 annual symposium of the IEEE Photonics Benelux Chapter
| | Location: | Belgium | | Citations: | Look up on Google Scholar
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Abstract
We present the design and fabrication of 2 µm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An anisotropic wet etching is used to fabricate a very narrow inverted taper tip. The integration of type-II lasers and photodetectors on a silicon photonic integrated circuit using the same III-V epitaxial stack for laser and detector enables the realization of a completely integrated spectroscopic sensor. Related Projects
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