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Authors: Y. Hu, M. Pantouvaki, J. Van Campenhout, S. Brems, I. Asselberghs, C. Huyghebaert, P. Absil, D. Van Thourhout
Title: Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon
Format: International Journal
Publication date: 1/2016
Journal/Conference/Book: Laser & Photonics Reviews
Editor/Publisher: Elsevier, 
Volume(Issue): 10(2) p.307-316
Internal Reference: [N-1828]
DOI:
Download: Download this Publication (1.7MB) (1.7MB)

Abstract

High performance integrated optical modulators are highly desired for future optical interconnects. The ultra-high bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.


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