| Authors: | J. Verbist, H. Chen, B. Moeneclaey, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Roelkens | | Title: | A 1310 nm sub-5V Ge APD based optical receiver in a silicon platform for 32 Gbps PAM-4 transmission over 40 km | | Format: | International Conference Proceedings | | Publication date: | 11/2016 | | Journal/Conference/Book: | Proceedings Symposium IEEE Photonics Society Benelux
| | Volume(Issue): | p.91-94 | | Location: | Ghent, Belgium | | Citations: | Look up on Google Scholar
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Abstract
Avalanche photodetectors (APDs) integrated in a silicon photonics platform can
significantly improve the link budget of optical interconnects by boosting the optical
receiver sensitivity compared to conventional p-i-n photodetectors at CMOS-friendly
bias voltages. We demonstrate a silicon-based receiver consisting of a low-voltage
(<5V) 1310 nm Ge APD and a low-power BiCMOS transimpedance amplifier. The
receiver offers a sensitivity improvement of ~6dB for 32 Gbps PAM-4 transmission over
>40 km with a commercially available direct-modulated DFB laser as transmitter,
allowing a 4 times higher split ratio in FTTx passive optical networks for the same link
budget. Related Projects
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