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Authors: O. Garcia, D. Van Thourhout, S. Verstuyft, M. Lopez-Amo, R. Baets, M. Galarza
Title: Vertically Coupled InP/InGaAsP Microring Lasers Using a Single Epitaxial Growth and Single-Side Lithography
Format: International Journal
Publication date: 8/2020
Journal/Conference/Book: Journal of Lightwave Technologies
Editor/Publisher: IEEE/OSA, 
Volume(Issue): 38(15) p.3983-3987
DOI: 10.1109/JLT.2020.2983463
Citations: Look up on Google Scholar
Download: Download this Publication (1.3MB) (1.3MB)

Abstract

The experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission with a side-lobe suppression ratio higher than 30 dB. The measured optic output power level is of tens of microwatts. The approach allows the improvement of the optical features maintaining the simplicity of the manufacturing procedure.


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