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Authors: D. Maes, Q. Hu, R. Borkowski, Y. Lefevre, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken
Title: High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s
Format: International Conference Proceedings
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: European Conference on Optical Communication
Location: Basel, Switzerland
Citations: Look up on Google Scholar
Download: Download this Publication (709KB) (709KB)


Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.

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