Abstract
The piezoelectric optomechanical platforms provide a promising avenue for efficient signal transduc-
tion between microwave and optical domains. In particular, Lead Zirconate Titanate (PZT) thin film
has emerged as a unique candidate due to its high piezoelectricity and optical transparency, enabling
strong electro-optomechanical transduction. This work explores the application of such transduction
to induce Fano resonance in a Silicon photonics integrated circuit (PIC). Our methodology involves
integrating a PZT thin film onto a Silicon PIC and subsequently removing the SiO2 layer to suspend
the Silicon waveguide, allowing controlled mechanical vibrations. Fano resonances, characterized by
their distinctive asymmetric line shape, were observed at frequencies up to 6.7 GHz with an extinction
ratio of 21 dB. Whereas, a high extinction ratio of 41 dB was achieved at the lower resonance
frequency of 223 MHz. Our results demonstrate the potential of piezoelectric thin film integration for
the generation of Fano resonances on passive photonic platforms such as Si. The distinctively sharp
and asymmetric response of the Fano resonance paves the way for highly sensitive, compact, and
power-efficient devices for a wide range of applications. Related Research Topics
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