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Authors: J. Brouckaert, G. Roelkens, D. Van Thourhout, R. Baets
Title: Compact InAlAs/InGaAs Metal-Semiconductor-Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides
Format: International Journal
Publication date: 10/2007
Journal/Conference/Book: IEEE Photonics Technology Letters
Volume(Issue): 19(19) p.1484-1486
DOI: 10.1109/lpt.2007.903767
Citations: 59 ( - last update: 14/7/2024)
48 (OpenCitations - last update: 3/5/2024)
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We present measurement results of compact and efficient InAlAs/InGaAs metal-semiconductor-metal photo-detectors integrated on silicon-on-insulator (SOI) waveguides. These thin film devices are heterogeneously integrated on the SOI substrate by means of low-temperature die-to-wafer bonding using DVS-BCB. The responsivity of a 30ìm long detector is 1.0A/W at a wavelength of 1550nm and the dark current is 4.5nA at a bias voltage of 5V.

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