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Authors: D. Van Thourhout, J. Van Campenhout, G. Roelkens, J. Brouckaert, R. Baets
Title: III-V Silicon heterogeneous integration for integrated transmitters and receivers
Format: International Conference Proceedings
Publication date: 1/2008
Journal/Conference/Book: Photonics West 2008 (invited)
Editor/Publisher: SPIE, 
Volume(Issue): p.conference 6896, session 8
Location: San Jose, United States
DOI: 10.1117/12.760376
Citations: 1 ( - last update: 14/7/2024)
1 (OpenCitations - last update: 3/5/2024)
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Silicon is excellent material for realizing compact nanophotonic ICs operating at wavelengths in the telecom
range. Moreover, the desired circuits can be realized with the most advanced equipment available, used also for
the fabrication of high-end electronic circuits. Efficient light emission and amplification directly from silicon
remains a bottleneck however. Therefore, we developed an alternative approach, based on the heterogeneous
integration of III-V epitaxial material and silicon nanophotonic circuits. Following fabrication and planarization
of the latter, small unprocessed dies of InP-based epitaxial material are bonded on top. Next, the substrate of
these dies is removed down to an etch stop layer. Finally the desired active optoelectronic devices are processed
in the remaining III-V layers using waferscale processes. The critical alignment between the sources and the
underlying nanophotonic circuits is ensured through accurate lithography. In this paper we review some recent
devices fabricated through this integration process

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