|Authors: ||J. Schrauwen, E.J. Klein, F. Ay, W.C.L. Hopman, R.M. De Ridder, D. Van Thourhout, R. Baets|
|Title: ||Reducing optical losses in focused-ion-beam etched silicon by annealing|
|Format: ||International Conference Poster|
|Publication date: ||5/2008|
|Location: ||United States|
|Citations: ||Look up on Google Scholar
Focused-ion-beam (FIB) is an interesting alternative for prototyping of photonic components because it can directly etch a semiconductor and reach feature sizes <50 nm. However, silicon exhibits high optical losses after FIB etching. We propose two techniques to reduce these losses: high temperature annealing and iodine enhanced FIB etching.
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