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Authors: S. Selvaraja, P. Jaenen, W. Bogaerts, P. Dumon, D. Van Thourhout, R. Baets
Title: Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193nm Optical Lithography
Format: International Journal
Publication date: 9/2009
Journal/Conference/Book: Journal of Lightwave Technology
Editor/Publisher: IEEE, 
Volume(Issue): 27(18) p.4076-4083
DOI: 10.1109/JLT.2009.2022282
Citations: 192 ( - last update: 14/7/2024)
154 (OpenCitations - last update: 3/5/2024)
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High-index contrast silicon-on-insulator technology
enables wavelength-scale compact photonic circuits. We report
fabrication of photonic circuits in silicon-on-insulator using complementary
metal-oxide-semiconductor processing technology. By
switching from advanced optical lithography at 248 nm to
193 nm, combined with improved dry etching, a substantial
improvement in process window, linearity, and proximity effect
is achieved. With the developed fabrication process, propagation
and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500 nm photonic wire and an excess bending loss of 0.013 dB/ 90 degree bend of 5 um radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

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