We report sub-nanometer linewidth uniformity in
silicon nano-photonics devices fabricated using high volume CMOS fabrication tools.We use wavelength selective devices such as ring resonators, Mach-Zehnder interferometers and arrayed waveguide gratings to assess the device nonuniformity within and between chips. The devices were fabricated using 193 nm or 248 nm optical lithography and dry etching in Silicon-on-Insulator wafer technology. Using 193 nm optical lithography, we have achieved a linewidth uniformity of 2 nm (after lithography) and 2.6 nm (after dry etch) over 200 mm wafer. Furthermore, with the developed fabrication process, using wavelength selective devices we have demonstrated a linewidth control better than 0.6 nm within chip and better than 2 nm chip-to-chip. The necessity for high resolution optical lithography is demonstrated by comparing device nonuniformity between the 248 nm and 193 nm optical lithography processes.
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