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Authors: P.R.A. Binetti, X.J.M. Leijtens, T. De Vries, Y.S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P.J. van Veldhoven, R. Noetzel, M.K. Smit
Title: InP/InGaAs Photodetector on SOI Circuitry
Format: International Conference Proceedings
Publication date: 9/2009
Journal/Conference/Book: 6th IEEE International Conference on Group IV Photonics
Volume(Issue): p.FA7
Location: San Francisco, United States
DOI: 10.1109/group4.2009.5338390
Citations: 7 (Dimensions.ai - last update: 28/2/2021)
4 (OpenCitations - last update: 1/3/2021)
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Abstract

We present the design, fabrication and characterization
of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

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