We study self phase modulation in submicron amorphous silicon-on-insulator waveguides. We extract both the real and imaginary part of the nonlinear parameter ã from a 1 cm long waveguide with a cross-section of 500x220nm2. The real and imaginary part of the nonlinear parameter are found to be 767W-1m-1 and 28W-1m-1 respectively. The figure of merit (FOM) is found to be 3.6 times larger then the FOM in crystalline silicon (c-Si).
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