Authors: | N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens | Title: | Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit | Format: | International Journal | Publication date: | 12/2011 | Journal/Conference/Book: | IEEE Photonics Technology Letters
| Volume(Issue): | 23(2011) p.1760 | DOI: | 10.1109/LPT.2011.2169244 | Citations: | 36 (Dimensions.ai - last update: 29/9/2024) 22 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract
We report the integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13µA at -0.1V) at room temperature. A high responsivity of 0.44A/W is measured at 2.29 µm. This yields 1.63x109 cmHz1/2/W of Johnson-noise-limited-detectivity. Related Projects
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