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Authors: S. Selvaraja, E.Rosseel, L.Fernandez, Martin Tabat, W. Bogaerts, J. Hautala, P. Absil
Title: SOI Thickness Uniformity Improvement using Corrective Etching for Silicon Nano-Photonic Device
Format: International Conference Poster
Publication date: 9/2011
Journal/Conference/Book: 8th International Conference on Group IV Photonics
Editor/Publisher: IEEE Photonics Society , 
Volume(Issue): p.71-73
Location: London , United Kingdom
DOI: 10.1109/group4.2011.6053719
Citations: 11 (Web of Knowledge / Dimensions.ai - last update: 27/9/2020)
8 (OpenCitations - last update: 27/9/2020)
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Abstract

We present our recent results on Si thickness uniformity improvement in a SOI wafer. We improved the thickness uniformity by 50%. The effect of the correction process on the propagation loss and device uniformity is also presented.

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