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Authors: H. Yu, W. Bogaerts, K. Komorowska, R. Baets, Korn dietmar, Alloatti Luca, Hillerkuss David, Koos Christian, Freude Wolfgang, Leuthold Juerg, Van Campenhout Joris, Verheyen Peter, Wouters Johan, Moelants Myriam, Absil Philippe
Title: Doping Geometries for 40G Carrier-Depletion-Based Silicon Optical Modulators
Format: International Conference Proceedings
Publication date: 3/2012
Journal/Conference/Book: The Optical Fiber Communication Conference and Exposition (OFC) and The National Fiber Optic Engineers Conference (NFOEC) 2012
Volume(Issue): p. OW4F.4
Location: Los Angeles , United States
DOI: 10.1364/ofc.2012.ow4f.4
Citations: 7 ( - last update: 14/7/2024)
5 (OpenCitations - last update: 3/5/2024)
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A comparison is preformed between carrier-depletion modulators with different doping
patterns to reach low VðLð = 0.62 V∙cm at DC with interdigitated and lateral PN junctions
respectively, but also show modulation at 35 Gbit/s (errorfree).

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