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Authors: M. Pantouvaki, H. Yu, P. Verheyen, G. Lepage, W. Bogaerts, M. Moelants, J. Wouters, D. Radisic, A. Vandervorst, P. Absil, J. Van Campenhout
Title: Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators
Format: International Conference Presentation
Publication date: 6/2012
Journal/Conference/Book: IEEE Optical Interconnects Conference
Volume(Issue): p.TuC4
Location: Santa Fe, United States
DOI: 10.1109/oic.2012.6224455
Citations: 3 (Web of Knowledge / Dimensions.ai - last update: 27/9/2020)
3 (OpenCitations - last update: 27/9/2020)
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Abstract

Silicon ring modulators with interdigitated diodes are shown to support improved extinction ratios up to 7.5dB at 3 dB insertion loss with 1 Vpp at 10Gb/s, compared to the lateral diode design.

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