We demonstrate a polarization rotator fabricated
using a 4 etch-step complementary metal–oxide–semiconductor
(CMOS)-compatible process including layer depositions on a
silicon-on-insulator wafer. The measured polarization rotation
efficiency is −0.51 dB over a wavelength range of 80 nm.
A robustness investigation shows that the design is compatible
with CMOS fabrication capabilities.
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