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Authors: A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tournié, G. Roelkens
Title: Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
Format: International Journal
Publication date: 5/2012
Journal/Conference/Book: Optics Express
Volume(Issue): 20(11) p.11665-11672
DOI: 10.1364/oe.20.011665
Citations: 51 ( - last update: 9/6/2024)
34 (OpenCitations - last update: 10/5/2024)
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In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3ìm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2ìm.

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