Authors: | S. Keyvaninia, S. Verstuyft, L. Van Landschoot, D. Van Thourhout, G. Roelkens, G. Duan, F. Lelarge, J.M. Fedeli, S. Messaoudene, T. De Vries, B. Smalbrugge, E.J. Geluk, J. Bolk, M.Smit | Title: | Heterogeneously integrated III-V/silicon distributed feedback lasers | Format: | International Journal | Publication date: | 12/2013 | Journal/Conference/Book: | Optics Letters
| Editor/Publisher: | OSA, | Volume(Issue): | 38(24) p.5434-5437 | DOI: | 10.1364/ol.38.005434 | Citations: | 98 (Dimensions.ai - last update: 8/12/2024) 88 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
Heterogeneously integrated III-V-on-silicon second order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 14mW output power coupled to a silicon waveguide, 50dB side mode suppression ratio and continuous wave operation up to 60°C is obtained. Related Research Topics
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