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Authors: A. Malik, S. Dwivedi, L. Van Landschoot, M. Muneeb, Y. Shimura, G. Lepage, J. Van Campenhout, W. Vanherle, T. Van Opstal, R. Loo, G. Roelkens
Title: Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Format: International Journal
Publication date: 11/2014
Journal/Conference/Book: Optics Express
Editor/Publisher: Optical Society of America, 
Volume(Issue): 22(23) p.28479-28488
DOI: 10.1364/OE.22.028479
Citations: 101 ( - last update: 16/6/2024)
57 (OpenCitations - last update: 19/4/2024)
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Germanium-on-silicon thermo-optic phase shifters are demonstrated
in the 5 um wavelength range. Basic phase shifters require 700
mW of power for a 2pi phase shift. The required power is brought down
to 80 mW by complete undercut using focused ion beam. Finally an
efficient thermo-optic phase shifter is demonstrated using germanium on
SOI platform. A tuning power of 105 mW is achieved for Ge-on-SOI which
is lowered to 16 mW for a free standing phase shifter.

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