Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services


Publication detail

Authors: Z. Wang, B. Tian, M. Pantouvaki, Weiming Guo, Philippe Absil, J Van Campenhout, Clement Merckling, D. Van Thourhout
Title: Room Temperature InP Distributed Feedback Laser Array Directly Grown on (001) Silicon
Format: International Journal
Publication date: 10/2015
Journal/Conference/Book: Nature Photonics
DOI: 10.1038/nphoton.2015.199
Citations: 281 ( - last update: 14/7/2024)
258 (OpenCitations - last update: 27/6/2024)
Look up on Google Scholar
Download: Download this Publication (1MB) (1MB)


Fully exploiting the silicon photonics platform for large volume, cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array monolithically grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined using standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits.

Related Projects

Citations (OpenCitations)

Back to publication list