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Authors: A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G. Roelkens, G. Morthier
Title: 56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode
Format: International Conference Presentation
Publication date: 3/2017
Journal/Conference/Book: Optical Fiber Communication Conference (OFC)
Editor/Publisher: OSA, 
Volume(Issue): p.paper Th4G.2 (3 pages)
Location: Los Angeles, United States
DOI: 10.1364/ofc.2017.th4g.2
Citations: 2 ( - last update: 14/7/2024)
2 (OpenCitations - last update: 27/6/2024)
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Electro-absorption modulation of a heterogeneously integrated InP/Si DFB laser is demonstrated by reverse biasing the InP tapers, used to couple the light between the InP and the Si waveguides. Modulation at 56 Gb/s is demonstrated.

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